Flux noise in ion-implanted nanoSQUIDs

Dynamic annealing in ion implanted SiC: Flux versus temperature dependence

Focused Ion Beam NanoSQUIDs as Novel NEMS Resonator Readouts

Nano electromechanical systems (NEMS) represent an important new class of device with wide ranging applications. In this paper we report proposals and calculations for novel methods for excitation and readout of cantilever-style NEMS resonators which are applicable over a wide temperature range. We suggest a Lorentz force-based excitation method and discuss an ultrasensitive readout provided by...

Avoiding dislocations in ion-implanted

Damage from ion implantation in Si can lead to dislocation formation during subsequent thermal annealing. These dislocations may sharply degrade device performance, making it desireable to suppress their formation. In this paper the criterion for dislocation formation is reviewed. Knowing this criterion suggests several ways to avoid dislocation formation in high dose implants for device applic...

Process dependence of 1/f noise and defects in ion implanted p-type piezoresistors

Related Articles dc illusion and its experimental verification Appl. Phys. Lett. 101, 051905 (2012) Direct current superconducting quantum interferometers with asymmetric shunt resistors Appl. Phys. Lett. 101, 052602 (2012) A Kondo insulating memristor Appl. Phys. Lett. 101, 013505 (2012) Switching-time analysis of binary-oxide memristors via a nonlinear model Appl. Phys. Lett. 100, 262106 (201...

Ion implanted dielectric elastomer circuits

Starfish and octopuses control their infinite degreeof-freedom arms with panache—capabilities typical of nature where the distribution of reflex-like intelligence throughout soft muscular networks greatly outperforms anything hard, heavy, and man-made. Dielectric elastomer actuators show great promise for soft artificial muscle networks. One way to make them smart is with piezo-resistive Dielec...